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  unisonic technologies co., ltd ut2955 power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2010 unisonic technologies co., ltd qw-r502-250.b single p-channel power mosfet ? description the ut2955 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch, in pwm applications, converters and power supplies. ? features * r ds(on) <170m ? @v gs =-10 v, i d =-0.75a * r ds(on) <180m ? @v gs =-10 v, i d =-1.5a * r ds(on) <185m ? @v gs =-10 v, i d =-2.4a * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol 1.gate 3.source 2.drain ? ordering information pin assignment ordering number package 1 2 3 packing UT2955G-AA3-R sot-223 g d s tape reel ut2955g-tn3-r to-252 g d s tape reel UT2955G-AA3-R (1)packing type (2)package type (3)halogen free (1) r: tape reel (2) aa3: sot-223, tn3: to-252 (3) g: halogen free
ut2955 power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-250.b ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -60 v gate-source voltage v gss 20 v continuous drain current i d -1.7 a pulsed drain current i dm -10.4 a single pulsed avalanche energy (note 3) e as 225 mj sot-223 1.0 power dissipation to-252 p d 1.13 w junction temperature t j +175 c storage temperature t stg -55 ~ +175 c note: 1. 2. 3. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) v dd =15v, v g =10v, i pk =6.7a, l=10mh, r g =25 ? ? thermal data parameter symbol ratings unit sot-223 150 junction to ambient to-252 ja 110 c /w sot-223 14 junction to case to-252 jc 4.53 c /w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250a -60 v drain-source leakage current i dss v ds =-60v, v gs =0v -1.0 a gate-source leakage current i gss v ds =0v, v gs =20v 100 na on characteristics (note) gate threshold voltage v gs(th) v ds =v gs , i d =-1.0ma -2.0 -4.0 v v gs =-10v, i d =-0.75a 145 170 v gs =-10v, i d =-1.5a 150 180 static drain-source on-resistance r ds(on) v gs =-10v, i d =-2.4a 154 185 m ? dynamic parameters input capacitance c iss 492 pf output capacitance c oss 165 pf reverse transfer capacitance c rss v ds =-25v, v gs =0v, f=1mhz 50 pf switching parameters total 14.3 total gate charge threshold q g 1.2 nc gate source charge q gs 2.3 nc gate drain charge q gd v ds =30v, v gs =10 v, i d =1.5a 5.2 nc turn-on delay time t d(on) 11 ns turn-on rise time t r 7.6 ns turn-off delay time t d(off) 65 ns turn-off fall-time t f v gs =10v, v dd =25v, i d =1.5a, r g =9.1 ? , r l =25 ? 38 ns source- drain diode ratings and characteristics diode forward voltage v sd i s =1.5a, v gs =0v -1.10 -1.30 v body diode reverse recovery time t rr 36 ns body diode reverse recovery charge q rr v gs =0v, di s /d t =100a/s i s =1.5a 0.139 nc note: pulse test: pulse width 300 s, duty cycle 2%.
ut2955 power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-250.b ? typical characteristics drain current vs. gate threshold voltage gate threshold voltage, v th (mv) drain current vs. drain-source breakdown voltage drain-source breakdown voltage, bv dss (v) 0 50 250 100 150 200 300 350 400 450 0 0 200 2 1000 1 400 600 800 1200 060 20 40 8 0 4 3 drain current, i d (a)
ut2955 power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-250.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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